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Preliminary Technical Information
Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
IXFA5N100P
IXFH5N100P
IXFP5N100P
V DSS
I D25
R DS(on)
= 1000V
= 5A
≤ 2.8 Ω
Avalanche Rated
Fast Intrinsic Diode
TO-263 (I XFA )
Symbol
Test Conditions
Maximum Ratings
G
S
(TAB)
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
1000
1000
± 30
V
V
V
TO-247 (I XFH )
V GSM
I D25
I DM
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 40
5
10
V
A
A
G
D
S
(TAB)
I A
E AS
dV/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
5
300
10
250
A
mJ
V/ns
W
TO-220 (I XFP )
T J
T JM
-55 ... +150
150
° C
° C
G
DS
(TAB)
T stg
T L
T SOLD
1.6mm (0.062) from case for 10s
Plastic body for 10s
-55 ... +150
300
260
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
M d
Weight
Mounting torque
TO-263
TO-220
TO-247
(TO-220,TO-247)
1.13 / 10
2.5
3.0
6.0
Nm/lb.in.
g
g
g
Features
International standard packages
Dynamic dv/dt Rating
Avalanche Rated
Low R DS(ON) , rugged Polar TM process
Low Q G
Low Drain-to-Tab capacitance
Low package inductance
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
1000
V
Advantages
Easy to mount
Space savings
V GS(th)
V DS = V GS , I D = 250 μ A
3.0
6.0
V
Applications:
I GSS
I DSS
V GS = ± 30V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 125 ° C
± 100 nA
10 μ A
750 μ A
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
2.8
Ω
power supplies
Uninterrupted power supplies
AC motor control
High speed power switching
applications
? 2008 IXYS CORPORATION, All rights reserved
DS99923(07/08)
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